Journal
NANOSCALE
Volume 6, Issue 13, Pages 7332-7338Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr06194a
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Funding
- Ministry of Science and Technology of the Republic of China [NSC 99-2221-E-007-023-MY3, NSC 101-2112-M-007-015-MY3, NSC 101-2218-E-007-009-MY3, NSC 102-2633-M-007-002]
- National Tsing Hua University [102N2022E1, 102N2744E1]
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Densely nanotwinned Cu nanowire (NW) arrays with an identical diameter of similar to 55 nm were fabricated by pulse electrochemical deposition at low temperature using anodic aluminum oxide as a template. Different growth orientations of nanotwinned Cu nanowire arrays were investigated. The endurance of the electrical current density before breakdown of the nanotwinned Cu NWs can reach up to 2.4 x 10(8) A cm(-2). The formation of highly dense nanotwins is attributed to relaxation of coalescence induced stress and twin fault stacking when Cu NWs grow by two-dimensional kinetics. A mechanism based on the twinning structure effect on the electromigration was proposed to explain the improved electrical endurance of Cu. The result demonstrates that the formation of nanotwins into Cu NWs can effectively suppress the void growth, leading to extended life time for use in electronic devices.
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