Journal
NANOSCALE
Volume 6, Issue 17, Pages 10100-10105Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr02001d
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Funding
- Priority Research Centers Program [2012-0005859]
- Basic Science Research Program [2012-0007298, 2012-040278]
- Center for Topological Matter in POSTECH [2011-0030786]
- Nanomaterial Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology (MEST) [2012M3A7B4049888]
- WCU Hybrid Materials Program [R31-2008-000-10075-0]
- BK21 Program through the National Research Foundation of Korea - Ministry of Education, Science and Technology
- Technology Innovation Program - Ministry of Knowledge Economy [10035430]
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We demonstrate a one-step fabrication of patterned graphene on SiO2 substrates through a process free from catalysts, transfer, and lithography. By simply placing a shadow mask during the plasma enhanced chemical vapor deposition (PECVD) of graphene, an arbitrary shape of graphene can be obtained on SiO2 substrate. The formation of graphene underneath the shadow mask was effectively prevented by the low-temperature, catalyst-free process. Growth conditions were optimized to form polycrystalline graphene on SiO2 substrates and the crystalline structure was characterized by Raman spectroscopy and transmission electron microscopy (TEM). Patterned graphene on SiO2 functions as a field-effect device by itself. Our method is compatible with present device processing techniques, and should be highly desirable for the proliferation of graphene applications.
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