4.8 Article

Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors

Journal

NANOSCALE
Volume 6, Issue 18, Pages 10530-10535

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr02634a

Keywords

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Funding

  1. National Natural Science Foundation of China [61178007, 61308034]
  2. Science and Technology Commission of Shanghai Municipality [12ZR1451800, 11nm0502400, 12PJ1409400, 10XD1404600]
  3. ERC
  4. Science Foundation Ireland [12/IA/1306]
  5. External Cooperation Program of BIC (Chinese Academy of Sciences) [181231KYSB20130007]
  6. National 10000-Talent Program
  7. CAS 100-Talent Program

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A series of layered molybdenum dichalcogenides, i.e., MoX2 (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open-and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refraction of the MoX2 dispersions, respectively. All the three-layered nanostructures exhibit prominent ultrafast saturable absorption (SA) for both femtosecond (fs) and picosecond (ps) laser pulses over a broad wavelength range from the visible to the near infrared. While the dispersions treated with low-speed centrifugation (1500 rpm) have an SA response, and the MoS2 and MoSe2 dispersions after higher speed centrifugation (10 000 rpm) possess two-photon absorption for fs pulses at 1030 nm, which is due to the significant reduction of the average thickness of the nanosheets; hence, the broadening of band gap. In addition, all dispersions show obvious nonlinear self-defocusing for ps pulses at both 1064 nm and 532 nm, resulting from the thermally-induced nonlinear refractive index. The versatile ultrafast nonlinear properties imply a huge potential of the layered MoX2 semiconductors in the development of nanophotonic devices, such as mode-lockers, optical limiters, optical switches, etc.

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