Journal
NANOSCALE
Volume 6, Issue 5, Pages 2821-2826Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr05993f
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Funding
- Basic Science Research Program [2011-0014209, 2011-0029412, 2009-0083540, 2012R1A2A1A03006049]
- Global Frontier Research Center for Advanced Soft Electronics [2011-0031629]
- Research Center Program of IBS (Institute for Basic Science) through the National Research Foundation of Korea Grant
- Korean government Ministry of Science, ICT and Future Planning
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We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V (1) s (1) (mean mobility value of 0.07 cm(2) V-1 s(-1)), and reliable operation.
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