4.8 Article

Pure thiophene-sulfur doped reduced graphene oxide: synthesis, structure, and electrical properties

Journal

NANOSCALE
Volume 6, Issue 13, Pages 7281-7287

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr05061k

Keywords

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Funding

  1. National Natural Science Foundation of China [51372033, 51202022]
  2. Program for New Century Excellent Talents in University [NCET-10-0291]
  3. 111 Project [B13042]
  4. Specialized Research Fund for the Doctoral Program of Higher Education of China [20120185120011]
  5. Fundamental Research Funds for the Central Universities [ZYGX2010J031]
  6. University of Electronic Science and Technology of China [Y02002010301041]

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Here we propose, for the first time, a new and green ethanol-thermal reaction method to synthesize high-quality and pure thiophene-sulfur doped reduced graphene oxide (rGO), which establishes an excellent platform for studying sulfur (S) doping effects on the physical/chemical properties of this material. We have quantitatively demonstrated that the conductivity enhancement of thiophene-S doped rGO is not only caused by the more effective reduction induced by S doping, but also by the doped S atoms, themselves. Furthermore, we demonstrate that the S doping is more effective in enhancing conductivity of rGO than nitrogen (N) doping due to its stronger electron donor ability. Finally, the dye-sensitized solar cell (DSCC) employing the S-doped rGO/TiO2 photoanode exhibits much better performance than undoped rGO/TiO2, N-doped rGO/TiO2 and TiO2 photoanodes. It therefore seems promising for thiophene-S doped rGO to be widely used in electronic and optoelectronic devices.

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