Journal
NANOSCALE
Volume 6, Issue 18, Pages 10505-10510Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr03181d
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Funding
- National Basic Research Program of China (973 Program) [2012CB932402]
- National Natural Science Foundation of China [61176057, 91123005, 61211130358]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
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Graphene oxide (GO) is employed as a hole conductor in inverted planar heterojunction perovskite solar cells, and the devices with CH3NH3PbI3-xClx as absorber achieve an efficiency of over 12%. The perovskite film grown on GO exhibits enhanced crystallization, high surface coverage ratio as well as preferred in-plane orientation of the (110) plane. Efficient hole extraction from the perovskite to GO is demonstrated.
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