4.8 Article

β-Sialon nanowires, nanobelts and hierarchical nanostructures: morphology control, growth mechanism and cathodoluminescence properties

Journal

NANOSCALE
Volume 6, Issue 1, Pages 424-432

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr03896c

Keywords

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Funding

  1. National Natural Science Foundation of China [51032007]
  2. Program for New Century Excellent Talents in University [NCET-12-0951]
  3. New Star Technology Plan of Beijing [2007A080]
  4. EPSRC [EP/J016926/1, EP/F059159/1] Funding Source: UKRI

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Morphology control of one dimension (1D) nanomaterials is a pivotal issue in the field of nanoscience research to exploit their novel properties. Herein, we report the morphology controlled synthesis of 1D beta-Sialon nanowires, nanobelts and hierarchical nanostructures via a thermal-chemical vapour deposition process using an appropriately selected catalyst and optimized temperature schedule. Vapour-solid (VS), a combination of vapour-liquid-solid (VLS)-based and VS-tip, and a combination of VS for one-generation nanowires with nucleation, growth and coalescence of two-generation nanobranches (NGCB) are used to explain the growth of beta-Sialon nanowires, nanobelts and hierarchical nanostructures, respectively. Cathodoluminescence measurements show that the individual beta-Sialon 1D nanostructures with different morphologies have different luminescent properties. All nanostructures exhibit two distinct emission peaks, the violet/blue emission centered at similar to 390 nm (3.18 eV), attributable to the near band edge (NBE) emission, and the red emission centered at similar to 728 nm (1.70 eV), assigned to the deep level (DL) emission. However, the DL emission is the ruling emission in the case of an individual beta-Sialon nanowire, whereas the NBE emission becomes dominant in the case of an individual nanobelt as well as a hierarchical nanostructure due to the size and surface effects. The as-synthesized beta-Sialon with controlled nanostructures and various morphologies can find potential applications in future nanodevices with tailorable or tunable photoelectric properties.

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