Journal
NANOSCALE
Volume 6, Issue 1, Pages 378-384Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr04320g
Keywords
-
Categories
Funding
- Brazilian agency CAPES
- Brazilian agency CNPq
- Brazilian agency F. Araucaria/CNPq
- National Institute of Science and Technology in Carbon Nanomaterials
- National Network of Carbon Nanotubes Research
Ask authors/readers for more resources
Iron-oxide-filled carbon nanotubes exhibit an intriguing charge bipolarization behavior which allows the material to be applied in resistive memory devices. Raman analysis conducted with an electric field applied in situ shows the Kohn anomalies and a strong modification of the electronic properties related to the applied voltage intensity. In addition, the I-D/I-G ratio indicated the reversibility of this process. The electrical characterization indicated an electronic transport governed by two main kinds of charge hopping, one between the filling and the nanotube and the other between the nanotube shells.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available