Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 212, Issue -, Pages 41-46Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2015.01.120
Keywords
ZnO nanowires; In-doped; HEMT; Sensor; Lactic acid
Funding
- National Major Research Program of China [2013CB932602]
- Major Project of International Cooperation and Exchanges [2012DFA50990]
- NSFC [51172022, 51232001, 51372020]
- Fundamental Research Funds for Central Universities
- Program for New Century Excellent Talents in University
- Beijing Higher Education Young Elite Teacher Project
- Programme of Introducing Talents of Discipline to Universities [B14003]
- Program for Changjiang Scholars and Innovative Research Team in University
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Indium (In) doped zinc oxide (ZnO) nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was demonstrated for the detection of lactic acid. The In-doped ZnO nanowires were synthesized via chemical vapor deposition (CVD) method. Such In-doped ZnO nanowires offered an effective surface area with high surface area-to-volume ratio as well as a favorable environment for the immobilization of lactate oxidase (LOx) on the HEMT gate area. The In-doped ZnO nanowires have better conductivity than pure ZnO nanowires and retained the electroactivity of enzymes. Due to the novel structure of the Si-doped GaAs cap layer, the drain-source current of the AlGaAs/GaAs HEMT sensor showed a rapid response when lactic acid solutions at various concentrations were introduced to the gate area of the HEMT. The fabricated sensor exhibited a wide detection range from 3 pM to 3 mM and a low detection limit of 3 pM. The result indicated that a portable, fast response and high sensitivity lactic acid detector can be realized by AlGaAs/GaAs HEMT sensor. (C) 2015 Published by Elsevier B.V.
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