Journal
NANOSCALE
Volume 5, Issue 20, Pages 9666-9670Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr01899g
Keywords
-
Categories
Funding
- JSPS through the FIRST Program
- CSTP, Japan
- 973 Program of China [2011CBA00703]
- Fundamental Research Funds for the Central Universities [HUST: CXY12M007]
- Grants-in-Aid for Scientific Research [25107004] Funding Source: KAKEN
Ask authors/readers for more resources
Two-dimensional (2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide (MoS2), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of layered metal chalcogenides (LMCs) and to identify possible compounds with high performance. Here we report the fabrication of high-performance top-gated field-effect transistors (FETs) and related logic gates from monolayer tin disulfide (SnS2), a non-transition metal dichalcogenide. The measured carrier mobility of our monolayer devices reaches 50 cm(2) V-1 s(-1), much higher than that of the back-gated counterparts (similar to 1 cm(2) V-1 s(-1)). Based on a direct-coupled FET logic technique, advanced Boolean logic gates and operations are also implemented, with a voltage gain of 3.5 and output swing of >90% for the NOT and NOR gates, respectively. The superior electrical and integration properties make monolayer SnS2 a strong candidate for next-generation atomic electronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available