Journal
NANOSCALE
Volume 5, Issue 10, Pages 4181-4185Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nr01015e
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Funding
- NRF (NRL program) [2012-0000126]
- Nano-Material Technology Development Program [2012M3a7B4034985]
- Brain Korea 21 Program
- LGD Company
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We demonstrate logic and static random access memory (SRAM) circuits using a 100 mu m long and 100 nm thin single ZnO nanowire (NW), which acts as a channel of field-effect transistors (FETs) with Al2O3 dielectrics. NW FETs are thus arrayed in one dimension to consist of NOT, NAND, and NOR gate logic, and SRAM circuits. Two respective top-gate NW FETs with Au and indium-tin-oxide (ITO) were connected to form an inverter, the basic NOT gate component, since the former gate leads to an enhanced mode FET while the latter to depletion mode due to their work function difference. Our inverters showed a high voltage gain of 22 under a 5 V operational voltage, resulting in successful operation of all other devices. We thus conclude that our long single NW approach is quite promising to extend the field of nano-electronics.
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