Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method

Two dimensional molybdenum disulfide (MoS2) has recently become of interest to semiconductor and optic industries. However, the current methods for its synthesis require harsh environments that are not compatible with standard fabrication processes. We report on a facile synthesis method of layered MoS2 using a thermal evaporation technique, which requires modest conditions. In this process, a mixture of MoS2 and molybdenum dioxide (MoO2) is produced by evaporating sulfur powder and molybdenum trioxide (MoO3) nano-particles simultaneously. Further annealing in a sulfur-rich environment transforms majority of the excess MoO2 into layered MoS2. The deposited MoS2 is then mechanically exfoliated into minimum resolvable atomically thin layers, which are characterized using micro-Raman spectroscopy and atomic force microscopy. Furthermore Raman spectroscopy is employed to determine the effect of electrochemical lithium ion exposure on atomically thin layers of MoS2.