Journal
NANOSCALE
Volume 4, Issue 10, Pages 3050-3054Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2nr30330b
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Funding
- National Research Foundation of Korea (NRF)
- MEST [2010-0008208, 2010-0029649, 2010-0029711, 2010-00285]
- KOSEF through EPB center [2010-001779]
- World Class University (WCU) [R31-2008-000-10059-0]
- Ministry of Public Safety & Security (MPSS), Republic of Korea [H0301-12-1009] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0090897, 2010-00285, R31-2012-000-10059-0, 2005-2001325] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 degrees C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.
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