4.8 Article

Photoluminescence of silicon quantum dots in nanospheres

Journal

NANOSCALE
Volume 4, Issue 24, Pages 7760-7765

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c2nr32375c

Keywords

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Funding

  1. National Basic Research Program of China (973 Program) [2012CB825800, 2012CB932400]
  2. National Natural Science Foundation of China (NSFC) [51132006, 91027041, 21073127, 21071104]
  3. Foundation for the Author of National Excellent Doctoral Dissertation of P R China (FANEDD) [200929]
  4. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
  5. Suzhou Planning Project of Science and Technology [ZXG2012028]
  6. Natural Science Foundation of the Jiangsu Higher Education Institutions of China [11KJB150015]

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Si quantum dots (SiQDs) based nanospheres (SiNSs) were prepared via a novel synthetic strategy. These SiNSs were demonstrated to possess unique dot spacing dependent photoluminescence (PL) up-conversion and surface dependent (N modified surface) down-converted PL. It was demonstrated that a small distance between SiQDs (<5 nm) is the necessary condition for the PL up-conversion of SiNSs, while the surface state of SiQDs will affect the maximum emission wavelength and the PL intensity. The as-prepared SiNSs feature excellent aqueous dispersibility, and their optical properties were found to be stable enough in a specified temperature and pH range.

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