Journal
NANOSCALE
Volume 4, Issue 23, Pages 7509-7516Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2nr32477f
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Funding
- National Science Foundation of the U.S. [DMR-1008107]
- Deutsche Forschungsgemeinschaft [Li 580/8-1]
- Korea Foundation for International Cooperation of Science & Technology (Global Research Laboratory) [K20815000003]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1008107] Funding Source: National Science Foundation
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A strong dependence of quantum dot (QD)-quantum well (QW) tunnel coupling on the energy band alignment is established in hybrid InAs/GaAs-InxGa1 As-x/GaAs dot-well structures by changing the QW composition to shift the QW energy through the QD wetting layer (WL) energy. Due to this coupling a rapid carrier transfer from the QW to the QD excited states takes place. As a result, the QW photoluminescence (PL) completely quenches at low excitation intensities. The threshold intensities for the appearance of the QW PL strongly depend on the relative position of the QW excitonic energy with respect to the WL ground state and the QD ground state energies. These intensities decrease by orders of magnitude as the energy of the QW increases to approach that of the WL due to the increased efficiency for carrier tunneling into the WL states as compared to the less dense QD states below the QW energy.
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