4.8 Article

Formation of monolayer and few-layer hexagonal boron nitride nanosheets via surface segregation

Journal

NANOSCALE
Volume 3, Issue 7, Pages 2854-2858

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c1nr10294j

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Funding

  1. National Natural Science Foundation of China [51011130028, 50990063, 50973095]
  2. Zhejiang Provincial Natural Science Foundation of China [R4110030]
  3. Nanotechnology Innovation Center of National Institute for Materials Science (NIMS), Japan

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We report that few-layer hexagonal boron nitride (h-BN) nanosheets can be produced by using a surface segregation method. The formation of h-BN sheets is via an intermediate boron-nitrogen buffer layer. Our results suggest that surface segregation of boron and nitrogen from a solid source is an alternative approach to tailoring synthesis of h-BN sheets for potential applications such as in graphene electronics.

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