Journal
NANOSCALE
Volume 3, Issue 8, Pages 3371-3375Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1nr10471c
Keywords
-
Categories
Funding
- Korean Government (MEST) [2010-0019116, 2010-0028971]
- KIST [2E22113]
Ask authors/readers for more resources
We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature below 600 degrees C. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer. Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer good electrical connection and easy strain relaxation due to huge volume expansion during Li ion insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large capacity with little fading upon cycling (a capacity of similar to 900 mA h g(-1) at 1C rate).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available