Journal
NANO RESEARCH
Volume 12, Issue 1, Pages 109-114Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-018-2187-5
Keywords
CsPbBr3 quantum dots; perovskite; light-emitting diodes; ligand exchange; -conjugation
Categories
Funding
- National Natural Science Foundation of China [U1632151, 61076040, 61520106012, 61522505, 61722404]
- Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology of China in National University of Defense Technology [SKL 2015 KF04]
- Key Research and Development Project of Anhui Province of China [1704a0902023]
Ask authors/readers for more resources
All-inorganic CsPbBr3 perovskite quantum dots (QDs) hold great promise as candidate materials for next-generation electroluminescent displays owing to their excellent optoelectronic properties. However, the long insulating ligands on the surface of CsPbBr3 QDs originating from the synthesis process hinder the fabrication of high-performance optoelectronic devices. Herein, an efficient ligand-exchange route is proposed with the use of perovskite-precursor-based halide ligands, including a series of phenalkylammonium bromides with a -conjugation benzene ring and different branch lengths. Based on the ligand-exchange method, the conductivity of the CsPbBr3 QD layer is significantly improved owing to ligand shortening and the insertion of the -conjugation benzene ring. As a result, high brightness (up to 12,650 cd/m(2)) and low turn-on voltage (as low as 2.66 V) can be realized in CsPbBr3 QD light-emitting diodes (QLEDs), leading to dramatic improvements in device performance with a current efficiency of 13.43 cd/A, power efficiency of 12.05 lm/W, and external quantum efficiency of 4.33%.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available