Journal
NANO RESEARCH
Volume 12, Issue 1, Pages 183-189Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-018-2200-z
Keywords
PtSe2; heterojunction; deep ultraviolet; photodetectors; self-powered
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Funding
- National Natural Science Foundation of China [61605174, 61774136]
- Key Projects of Higher Education in Henan Province [17A140012]
- Research Grants Council, University Grants Committee (RGC, UGC) [GRF 152109/16E PolyU B-Q52T]
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The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mAW(-1), an ultrahigh specific detectivity of 3.8 x 10(14) Jones, linear dynamic range of 155 dB and current on/off ratio of similar to 108, as well as fast response speeds of 45/102 s were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection.
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