Journal
NANO RESEARCH
Volume 7, Issue 8, Pages 1137-1145Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-014-0476-1
Keywords
transition metal; dichalcogenides; MoS2; laser annealing; thin-film transistors; flexible electronics
Categories
Funding
- National Research Foundation of Korea [NRF-2013K1A3A1A32035549, NRF-2013R1A1A2008191, NRF-2013K1A4A3055679]
- Kyung Hee University [KHU-20121643]
- Industrial Strategic Technology Development Program [10045145]
- US Air Force Office of Scientific Research AFOSR/AOARD [FA2386-13-4123]
- New Faculty Research Program of Kookmin University in Korea
- National Research Foundation of Korea [2013K1A3A1A32035549] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly(ethylene naphthalate) (PEN) substrates with low thermal budget (< 200 A degrees C). The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility (from 24.84 to 44.84 cm(2)center dot V-1 center dot s(-1)), increased output resistance (0.42 M Omega at V (gs) - V (th) = 20 V, a three-fold increase), a six-fold increase in the self-gain, and decreased sub-threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semiconductor FETs in flexible electronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available