Journal
NANO RESEARCH
Volume 6, Issue 8, Pages 602-610Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-013-0336-4
Keywords
hexagonal boron nitride; capacitor; breakdown strength; tunneling effect
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Funding
- National Natural Science Foundation of China [51172122]
- Foundation for the Author of National Excellent Doctoral Dissertation [2007B37]
- Program for New Century Excellent Talents in University
- Tsinghua University Initiative Scientific Research Program [20111080939]
- China Postdoctoral Science Foundation [2011M500310]
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Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of similar to 9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 mu F/cm(2), which is one order of magnitude higher than the calculated value.
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