4.8 Article

Towards Flexible All-Carbon Electronics: Flexible Organic Field-Effect Transistors and Inverter Circuits Using Solution-Processed All-Graphene Source/Drain/Gate Electrodes

Journal

NANO RESEARCH
Volume 3, Issue 10, Pages 714-721

Publisher

TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-010-0035-3

Keywords

Solution processing; flexibility; all-graphene-electrode OFETs; inverter circuits

Funding

  1. National Natural Science Foundation of china (NSFC) [50933003, 20774047]
  2. Ministry of Science and Technology of the People's Repulic of China (MOST) [2009AA032304]
  3. Natural Science Foundation (NSF) of Tianjin City [08JCZDJC25300]

Ask authors/readers for more resources

Flexible organic field-effect transistors (OFETs) using solution-processable functionalized graphene for all the electrodes (source, drain, and gate) have been fabricated for the first time. These OFETs show performance comparable to corresponding devices using Au electrodes as the source/drain electrodes on SiO2/Si substrates with Si as the gate electrode. Also, these devices demonstrate excellent flexibility without performance degradation over severe bending cycles. Furthermore, inverter circuits have been designed and fabricated using these all-graphene-electrode OFETs. Our results demonstrate that the long-sought dream for all-carbon and flexible electronics is now much closer to reality.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available