Journal
NANO RESEARCH
Volume 2, Issue 4, Pages 327-335Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-009-9030-y
Keywords
Nanowire (NW); vacancy ordering; superlattice; III-VI; lithium insertion
Categories
Funding
- U. S. Department of Energy [DE-FG36-08GOI8004]
Ask authors/readers for more resources
Superlattice structures resulting from vacancy ordering have been observed in many materials. Here we report vacancy ordering behavior in III2VI3 nanowires. The formation of layer-like structural vacancies has been achieved during the synthesis of In2Se3 nanowires through a vapor-transport route. Doping In2Se3 nanowires with small amounts of Ga during synthesis can completely change the structural vacancy ordering from a layer-like to a screw-like pattern for (InxGa1-x)(2)Se-3 nanowires. Lithium atoms can fill in the layer-like structural vacancies of In2Se3 nanowires and generate new types of vacancy and lithium atom ordering superlattices. The screw-patterned vacancies of (InxGa1-x)(2)Se-3 nanowires show reversible lithium insertion. Our results contribute to the understanding of structure property correlations of III2VI3 materials used in lithium ion storage, photovoltaics, and phase change memory.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available