Journal
NANO LETTERS
Volume 18, Issue 11, Pages 6967-6973Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b02887
Keywords
Perovskites; surface passivation; photoluminescence; quantum efficiency; size effect
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Funding
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05-CH11231, KC3103]
- DOE Office of Science User Facility [DE-AC02-05-CH11231]
- NSF [DBI-0116016]
- Camille and Henry Dreyfus Foundation [EP-14-151]
- Suzhou Industrial Park
- Alexander von Humboldt Foundation
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Surface condition plays an important role in the optical performance of semiconductor materials. As new types of semiconductors, the emerging metal-halide perovskites are promising for next-generation optoelectronic devices. We discover significantly improved light-emission efficiencies in lead halide perovskites due to surface oxygen passivation. The enhancement manifests close to 3 orders of magnitude as the perovskite dimensions decrease to the nanoscale, improving external quantum efficiencies from <0.02% to over 12%. Along with about a 4-fold increase in spontaneous carrier recombination lifetimes, we show that oxygen exposure enhances light emission by reducing the nonradiative recombination channel. Supported by X-ray surface characterization and theoretical modeling, we propose that excess lead atoms on the perovskite surface create deep-level trap states that can be passivated by oxygen adsorption.
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