Journal
NANO LETTERS
Volume 18, Issue 9, Pages 5432-5438Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01764
Keywords
Charge-density wave; vanadium diselenide; metal insulator transition; transition-metal dichalcogenides; two-dimensional materials
Categories
Funding
- National Research Foundation (NRF) - Korean government [NRF-2009-0093818, NRF-2014R1A4A1071686, NRF-2015R1D1A1A01057271, NRF-2017R1C1B2004927]
- Danish Council for Independent Research, Natural Sciences under the Sapere Aude program [DFF-4090-00125]
- VILLUM FONDEN [15375]
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02- 05CH11231]
- Ministry of Education, Science, and Technology of the National Research Foundation of Korea (NRF) [NRF-2015R1C1A1A01051629, 2011-0030046]
- TJ Park Science Fellowship of the POSCO TJ Park Foundation
- POSTECH Basic Science Research Institute Grant (2017)
- Institute for Basic Science in Korea [IBS-R009-G1]
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Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.
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