Journal
NANO LETTERS
Volume 18, Issue 10, Pages 6292-6300Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b02503
Keywords
Nanowire lasers; quantum wells; monolithic III/V integration on Si; InGaAs; scanning transmission electron microscopy; photoluminescence; molecular beam epitaxy
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Funding
- Deutsche Forschungsgemeinschaft (DFG) [FI 947/41, KO 4005/7-1]
- Nanosystems Initiative Munich (NIM)
- International Graduate School of Science and Engineering (TUM-IGSSE)
- IBM International Ph.D. Fellowship Program
- NSF [DMR-1611341]
- NSF GRFP
- NSF-MRI [DMR-0420532]
- ONR-DURIP [N00014-0400798, N00014-0610539, N00014-0910781, N00014-1712870]
- MRSEC program at the Materials Research Center [NSF DMR-1720139]
- SHyNE Resource [NSF ECCS-1542205]
- Initiative for Sustainability and Energy (ISEN) at Northwestern University
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Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AIGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from similar to 0.8 to similar to 1.1 mu m. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to similar to 25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.
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