Journal
NANO LETTERS
Volume 18, Issue 10, Pages 6381-6386Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b02742
Keywords
Ferroelectric domain walls; conduction; carrier mobilities; Hall microscopy
Categories
Funding
- Engineering and Physical Sciences Research Council [EP/P02453X/1]
- United States Ireland Research and Development Partnership Programme
- Queen's University Belfast Central Research Infrastructure Fund (CRIF)
- Northern Ireland Department for the Economy
- EPSRC [EP/N018389/1, EP/P02453X/1] Funding Source: UKRI
Ask authors/readers for more resources
Kelvin probe force microscopy (KPFM) has been used to directly and quantitatively measure Hall voltages, developed at conducting tail-to-tail domain walls in ErMnO3 single crystals, when current is driven in the presence of an approximately perpendicular magnetic field. Measurements across a number of walls, taken using two different atomic force microscope platforms, consistently suggest that the active p-type carriers have unusually large room temperature mobilities of the order of hundreds of square centimeters per volt second. Associated carrier densities were estimated to be of the order of 10(13) cm(-3). Such mobilities, at room temperature, are high in comparison with both bulk oxide conductors and LaAlO3-SrTiO3 sheet conductors. High carrier mobilities are encouraging for the future of domain-wall nanoelectronics and, significantly, also suggest the feasibility of meaningful investigations into dimensional confinement effects in these novel domain-wall systems.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available