Journal
NANO LETTERS
Volume 14, Issue 4, Pages 1804-1809Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl404379w
Keywords
Vertical silicon nanowire; photodetector; color imaging; image sensor; selective absorption
Categories
Funding
- Defense Advanced Research Projects Agency (DARPA) N/MEMS S&T Fundamentals program - Space and Naval Warfare Systems Center Pacific (SPAWAR) [N66001-10-1-4008]
- DARPA [W911NF-13-2-0015]
- National Science Foundation (NSF) [ECCS-1307561]
- Zena Technologies
- NSF
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1307561] Funding Source: National Science Foundation
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The organic dye filters of conventional color image sensors achieve the red/green/blue response needed for color imaging, but have disadvantages related to durability, low absorption coefficient, and fabrication complexity. Here, we report a new paradigm for color imaging based on all-silicon nanowire devices and no filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that their spectral sensitivities are governed by nanowire radius, and perform color imaging. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency.
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