Journal
NANO LETTERS
Volume 14, Issue 8, Pages 4293-4298Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5009629
Keywords
Nanomembrane; metalorganic chemical vapor deposition; Gallium nitride; electrochemical etching; heterostructure; epitaxy
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Funding
- National Science Foundation (NSF) [CMMI-1129964]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1129964] Funding Source: National Science Foundation
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Single crystalline nanomembranes (NMs) represent a new embodiment of semiconductors having a two-dimensional flexural character with comparable crystalline perfection and optoelectronic efficacy. In this Letter, we demonstrate the preparation of GaN NMs with a freestanding thickness between 90 to 300 nm. Large-area (>5 x 5 mm(2)) GaN NMs can be routinely obtained using a procedure of conductivity-selective electrochemical etching. GaN NM is atomically flat and possesses an optical quality similar to that from bulk GaN. A light-emitting optical heterostructure NM consisting of p-GaN/InGaN quantum wells/GaN is prepared by epitaxy, undercutting etching, and layer transfer. Bright blue light emission from this heterostructure validates the concept of NM-based optoelectronics and points to potentials in integration. flexible applications and heterogeneous
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