Journal
NANO LETTERS
Volume 14, Issue 4, Pages 1739-1744Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4037824
Keywords
Hexagon boron nitride; graphene; nanocapacitor; quantum capacitance; h-BN/graphene stacking heterostructure
Categories
Funding
- STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0969086] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1161163] Funding Source: National Science Foundation
- Office Of The Director
- Office Of Internatl Science &Engineering [0968405] Funding Source: National Science Foundation
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Conventional wisdom suggests that decreasing dimensions of dielectric materials (e.g., thickness of a film) should yield increasing capacitance. However, the quantum capacitance and the so-called dead-layer effect often conspire to decrease the capacitance of extremely small nanostructures, which is in sharp contrast to what is expected from classical electrostatics. Very recently, first-principles studies have predicted that a nanocapacitor made of graphene and hexagonal boron nitride (h-BN) films can achieve superior capacitor properties. In this work, we fabricate the thinnest possible nanocapacitor system, essentially consisting of only monolayer materials: h-BN with graphene electrodes. We experimentally demonstrate an increase of the h-BN films' permittivity in different stack structures combined with graphene. We find a significant increase in capacitance below a thickness of similar to 5 nm, more than 100% of what is predicted by classical electrostatics. Detailed quantum mechanical calculations suggest that this anomalous increase in capacitance is due to the negative quantum capacitance that this particular materials system exhibits.
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