4.8 Article

Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates

Journal

NANO LETTERS
Volume 14, Issue 5, Pages 2419-2425

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl5000906

Keywords

molybdenum diselenide; monolayer; selenization; chemical vapor deposition; photoluminescence; Raman spectroscopy

Funding

  1. Singapore National Research Foundation [NRF-RF2009-06]
  2. Ministry of Education [MOE2012-T2-2-086]
  3. Nanyang Technological University [M58110061]
  4. U.S. DOE [DE-FG02-09ER46554]
  5. Wigner Fellowship through the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
  6. Office of Basic Energy Sciences, Materials Sciences and Engineering Division, U.S. DOE
  7. ORNL's Center for Nanophase Materials Sciences (CNMS) - Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. DOE

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We present successful synthesis of large area atomically thin MoSe2 films by selenization of MoO3 in a vapor transport chemical vapor deposition (CVD) system. The homogeneous thin film can reach an area of 1 x 1 cm(2) consisting primarily of monolayer and bilayer MoSe2 film. Scanning transmission electron microscopy (STEM) images reveal the highly crystalline nature of the thin film and the atomic structure of grain boundaries in monolayers. Raman and photoluminescence spectroscopy confirm the high quality of as-grown MoSe2 in optics, and electronic transport measurements highlight the potential applications of the sample in nanoelectronics.

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