Journal
NANO LETTERS
Volume 14, Issue 10, Pages 5834-5838Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5027309
Keywords
Graphene field effect transistors; direct terahertz detection; CVD graphene; antenna-integrated detectors
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Funding
- Swedish Foundation of Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation (KAW) the Swedish Research Council [2012-4978]
- Hessian excellence initiative LOEWE Sensors towards Terahertz
- European Social Fund under the Global Grant measure
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We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz(0.5). Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
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