Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga2O3 Top-Interface of AgTS/S(CH2)nT//Ga2O3/EGaIn Junctions

Junctions with the structure Ag-TS/S(CH2)(n)T//Ga2O3/EGaIn (where S(CH2)(n)T is a self-assembled monolayer, SAM, of n-alkanethiolate bearing a terminal functional group T) make it possible to examine the response of rates of charge transport by tunneling to changes in the strength of the interaction between T and Ga2O3. Introducing a series of Lewis acidic/basic functional groups (T = -OH, -SH, -CO2H, -CONH2, and -PO3H) at the terminus of the SAM gave values for the tunneling current density, J(V) in A/cm(2), that were indistinguishable (i.e., differed by less than a factor of 3) from the values observed with n-alkanethiolates of equivalent length. The insensitivity of the rate of tunneling to changes in the terminal functional group implies that replacing weak van der Waals contact interactions with stronger hydrogen- or ionic bonds at the T//Ga2O3 interface does not change the shape (i.e., the height or width) of the tunneling barrier enough to affect rates of charge transport. A comparison of the injection current, J(0), for T = -CO2H, and T = -CH2CH3-two groups having similar extended lengths (in angstrom, or in numbers of non-hydrogen atoms)-suggests that both groups make indistinguishable contributions to the height of the tunneling barrier.