Journal
NANO LETTERS
Volume 14, Issue 5, Pages 2401-2406Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl500049g
Keywords
Conductive filament; resistive switching; C-AFM; CBRAM; AFM-tomography
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Funding
- Agency for Innovation by Science and Technology (IWT)
- IMEC
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The basic unit of information in filamentary-based resistive switching memories is physically stored in a conductive filament. Therefore, the overall performance of the device is indissolubly related to the properties of such filament. In this Letter, we report for the first time on the three-dimensional (3D) observation of the shape of the conductive filament. The observation of the filament is done in a nanoscale conductive-bridging device, which is programmed under real operative conditions. To obtain the 3D-information we developed a dedicated tomography technique based on conductive atomic force microscopy. The shape and size of the conductive filament are obtained in three-dimensions with nanometric resolution. The observed filament presents a conical shape with the narrow part close to the inert-electrode. On the basis of this shape, we conclude that the dynamic filament-growth is limited by the cation transport. In addition, we demonstrate the role of the programming current, which clearly influences the physical-volume of the induced conductive filaments.
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