Journal
NANO LETTERS
Volume 14, Issue 3, Pages 1249-1254Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl404152r
Keywords
Raman; strain; silicon; nanostructures; power dependence; FEM
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Funding
- Swiss National Science Foundation (SNF) [130181]
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Strain analysis of complex three-dimensional nanobridges conducted via Raman spectroscopy requires careful experimentation and data analysis supported by simulations. A method combining micro-Raman spectroscopy with finite element analysis is presented, enabling a detailed understanding of strain-sensitive Raman data measured on Si nanobridges. Power-dependent measurements are required to account for the a priori unknown scattering efficiency related to size and geometry. The experimental data is used to assess the validity of previously published phonon deformation potentials.
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