Journal
NANO LETTERS
Volume 14, Issue 10, Pages 5625-5629Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5021975
Keywords
MoS2; transient absorption spectroscopy; exciton dynamics; exciton-exciton annihilation
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Funding
- National Science Foundation [DMR-1122594, DMR-1106172]
- Columbia Energy Frontier Research Center - U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences [DE-SC0001085]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1106172] Funding Source: National Science Foundation
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Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electronhole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient excitonexciton annihilation, a four-body interaction, in this material. Excitonexciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of excitonexciton annihilation was determined to be (4.3 +/- 1.1) x 10 (2) cm(2)/s at room temperature.
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