Journal
NANO LETTERS
Volume 14, Issue 6, Pages 3582-3586Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl501242b
Keywords
Nanowire; spin qubit; dephasing; spin relaxation; dispersive readout
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Funding
- Department of Energy, Office of Science SCGF
- EC FP7-ICT project SiSPIN [323841]
- Danish National Research Foundation
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Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T*(2) similar to 0.18 mu s exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
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