Journal
NANO LETTERS
Volume 14, Issue 3, Pages 1242-1248Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4041274
Keywords
Graphene photonics; THz modulator; extraordinary optical transmission; near-field enhancement; high on/off ratio
Categories
Funding
- Air Force Office of Scientific Research (AFOSR) [FA9550-12-1-0261]
- National Science Foundation [ECCS-1308014, OISE-0968405, EEC-0540832]
- Department of Energy [DE-FG02-06ER46308]
- Robert A. Welch Foundation [C-1509]
- NSF-PIRE [OISE-0968405]
- US Office of Naval Research (MURI) [N000014-09-1-1066]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1101171] Funding Source: National Science Foundation
- Office Of Internatl Science &Engineering
- Office Of The Director [0968405] Funding Source: National Science Foundation
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Gate-controllable transmission of terahertz (THz) radiation makes graphene a promising material for making high-speed THz wave modulators. However, to date, graphene-based THz modulators have exhibited only small on/off ratios due to small THz absorption in single-layer graphene. Here we demonstrate a similar to 50% amplitude modulation of THz waves with gated single-layer graphene by the use of extraordinary transmission through metallic ring apertures placed right above the graphene layer. The extraordinary transmission induced similar to 7 times near-filed enhancement of THz absorption in graphene. These results promise complementary metal-oxide-semiconductor compatible THz modulators with tailored operation frequencies, large on/off ratios, and high speeds, ideal for applications in THz communications, imaging, and sensing.
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