Journal
NANO LETTERS
Volume 14, Issue 7, Pages 4036-4043Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl501480f
Keywords
VO2; metal insulator transition; ultrathin films; synchrotron radiation; X-ray diffraction
Categories
Funding
- National Basic Research Program of China [2012CB825800, 2014CB848900]
- Science Fund for Creative Research Groups of NSFC [11321503]
- National Natural Science Foundation of China [11175183]
- Startup Funding for the New Faculty of the University of Science and Technology of China (USTC)
- Fundamental Research Funds for the Central Universities [WK2310000016]
- Chinese Academy of Sciences [KJCX2-YW-N42]
- beamline BL14B of Shanghai Synchrotron Radiation Facility
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Tuning the metal insulator transition (MIT) behavior of VO2 film through the interfacial strain is effective for practical applications. However, the mechanism for strain-modulated MIT is still under debate. Here we directly record the strain dynamics of ultrathin VO2 film on TiO2 substrate and reveal the intrinsic modulation process by means of synchrotron radiation and first-principles calculations. It is observed that the MIT process of the obtained VO2 films can be modulated continuously via the interfacial strain. The relationship between the phase transition temperature and the strain evolution is established from the initial film growth. From the interfacial strain dynamics and theoretical calculations, we claim that the electronic orbital occupancy is strongly affected by the interfacial strain, which changes also the electron electron correlation and controls the phase transition temperature. These findings open the possibility of an active tuning of phase transition for the thin VO2 film through the interfacial lattice engineering.
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