Journal
NANO LETTERS
Volume 14, Issue 8, Pages 4523-4528Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5015553
Keywords
nanowires; ion beam doping; zinc oxide; rare earth elements; luminescence; density functional theory
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Funding
- German Research Society (DFG) [FOR1616, GRK1782]
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Successful doping and excellent optical activation of Eu3+ ions in ZnO nanowires were achieved by ion implantation. We identified and assigned the origin of the intra-4f luminescence of Eu3+ ions in ZnO by first-principles calculations to Eu-O-i complexes, which are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 degrees C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires dominating the photoluminescence spectrum even at room temperature. The high intensity enabled us to study the luminescence of single ZnO nanowires in detail, their behavior as a function of excitation power, waveguiding properties, and the decay time of the transition.
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