Journal
NANO LETTERS
Volume 14, Issue 3, Pages 1687-1691Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5006355
Keywords
Nanoelectromechanical systems; mechanical switch; steep subthreshold slope device; semiconductor nanowires
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Funding
- NSF [ECCS-0955199]
- Hellman Fellowship
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0955199] Funding Source: National Science Foundation
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We report the first experimental demonstration of a three-terminal nanoelectromechanical field effect transistor (NEMFET) with measurable subthreshold slope as small as 6 mV/dec at room temperature and a switching voltage window of under 2 V. The device operates by modulating drain current through a suspended nanowire channel via an insulated gate electrode, thus eliminating the need for a conducting moving electrode, and yields devices that reliably switch on/off for up to 130 cycles. Radiofrequency measurements have confirmed operation at 125 MHz. Our measurements and simulations suggest that the NEMFET design is scalable toward sub-1 V ultrahigh-frequency operation for future low-power computing systems.
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