4.8 Article

Enhancing Magnetic Ordering in Cr-Doped Bi2Se3 Using High-TC Ferrimagnetic Insulator

Journal

NANO LETTERS
Volume 15, Issue 1, Pages 764-769

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl504480g

Keywords

Magnetic topological insulator; XMCD; proximity effect; ferrimagnetic insulator YIG; spintronics

Funding

  1. State Key Programme for Basic Research of China [2014CB921101]
  2. NSFC [61274102]
  3. UK STFC
  4. DARPA [N66001-12-1-4034, N66001-11-1-4105]
  5. FAME, a STARnet Center of DARPA
  6. MARCO
  7. NSF
  8. Div Of Electrical, Commun & Cyber Sys
  9. Directorate For Engineering [1231348] Funding Source: National Science Foundation

Ask authors/readers for more resources

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-T-C ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced T-C of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

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