Journal
NANO LETTERS
Volume 14, Issue 6, Pages 3270-3276Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5006542
Keywords
Graphene; boron nitride; transitional metals dichalcogenides; layered oxides; carrier mobility; capacitance spectroscopy
Categories
Funding
- European Research Council
- Engineering and Physical Sciences Research Council (U.K.)
- Royal Society
- U.S. Office of Naval Research
- U.S. Air Force Office of Scientific Research
- U.S. Army Research Office
- EPSRC [EP/G035954/1, EP/K005014/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G035954/1, EP/K005014/1, 1240086] Funding Source: researchfish
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Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V-1 s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of similar to 1000 cm(2) V-1 s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
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