Journal
NANO LETTERS
Volume 14, Issue 4, Pages 1756-1761Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl404159x
Keywords
Germanium; nanowires; facet; contact angle; vapor-liquid-solid growth; in situ scanning electron microscopy
Categories
Funding
- Grant Agency of the Czech Republic [P108/12/P699]
- European Regional Development Fund (CEITEC) [CZ.1.05/1.1.00/02.0068]
- FEI Company
Ask authors/readers for more resources
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth via a vapor-liquid-solid (VLS) mechanism. For the growth of long and straight nanowires, it has been assumed so far that the droplet is pinned to the nanowire top and any instability in the droplet position leads to nanowire kinking. Here, using real-time in situ scanning electron microscopy during germanium nanowire growth, we show that the increase or decrease in the droplet wetting angle and subsequent droplet unpinning from the growth interface may also result in the growth of straight nanowires. Because our argumentation is based on terms and parameters common for VLS-grown nanowires, such as the geometry of the droplet and the growth interface, these conclusions are likely to be relevant to other nanowire systems.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available