Journal
NANO LETTERS
Volume 13, Issue 2, Pages 550-554Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl304060g
Keywords
Hexagonal boron nitride; thermal conductivity; phonon transport; thermal contact resistance; two-dimensional materials
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Funding
- United States Department of Energy [DE-FG02-07ER46377]
- Office of Naval Research [N00014-10-1-0581]
- Grants-in-Aid for Scientific Research [24651148, 23246116, 23310096] Funding Source: KAKEN
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The thermal conductivity of suspended few-layer hexagonal boron nitride (h-BN) was measured using a microbridge device with built-in resistance thermometers. Based on the measured thermal resistance values of 11-12 atomic layer h-BN samples with suspended lengths ranging between 3 and 7.5 mu m, the room-temperature thermal conductivity of a 11-layer sample was found to be about 360 W m(-1) K-1 approaching the basal plane value reported for bulk h-BN. The presence of a polymer residue layer on the sample surface was found to decrease the thermal conductivity of a 5-layer h-BN sample to be about 250 W m(-1) K-1 at 300 K. Thermal conductivities for both the 5-layer and the 11-layer samples are suppressed at low temperatures, suggesting increasing scattering of low frequency phonons in thin h-BN samples by polymer residue.
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