Journal
NANO LETTERS
Volume 13, Issue 9, Pages 4113-4117Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4016182
Keywords
Nanowires; solar cell; indium phosphide; surface recombination
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Funding
- Agentschap NL
- NWO
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We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 10(7) is obtained at +/- 1 V. The resulting NW solar cell exhibits an open-circuit voltage (V-oc) of 0.73 V, a short-circuit current density (J(sc)) of 21 mA/cm(2), and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.
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