4.8 Article

Phosphorus-Doped Silicon Nanocrystals Exhibiting Mid-Infrared Localized Surface Plasmon Resonance

Journal

NANO LETTERS
Volume 13, Issue 3, Pages 1317-1322

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl4001184

Keywords

Silicon nanocrystals; localized surface plasmon resonance; doping

Funding

  1. MRSEC of the National Science Foundation [DMR-0819885]
  2. Army Office of Research under MURI [W911NF-12-1-0407]
  3. NSF through the MRSEC
  4. NSF through the NNIN
  5. Abu Dhabi-Minnesota Institute for Research Excellence (ADMIRE)
  6. Petroleum Institute of Abu Dhabi
  7. Department of Chemical Engineering and Materials Science of the University of Minnesota

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Localized surface plasmon resonances (LSPRs) enable tailoring of the optical response of nanomaterials through their free carrier concentration, morphology, and dielectric environment. Recent efforts to expand the spectral range of usable LSPR frequencies into the infrared successfully demonstrated LSPRs in doped semiconductor nanocrystals. Despite silicon's importance for electronic and photonic applications, no LSPRs have been reported for doped silicon nanocrystals. Here we demonstrate doped silicon nanocrystals synthesized via a nonthermal plasma technique that exhibits tunable LSPRs in the energy range of 0.07-0.3 eV or mid-infrared wavenumbers of 600-2500 cm(-1).

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