Journal
NANO LETTERS
Volume 13, Issue 2, Pages 555-558Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl3040674
Keywords
Ballistic transport; scattering; surface roughness; mean free path; quantization; subbands
Categories
Funding
- Intel
- FCRP/MSD Focus Center
- NSF E3S Center
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
- Sloan Research Fellowship
- NSF CAREER Award
- World Class University program at Sunchon National University
- NSF Graduate Fellowship
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Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as similar to 150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theoretically assessed by a method that combines Fermi's golden rule and a numerical Schrodinger-Poisson simulation to determine the surface scattering potential with the theoretical calculations being consistent with experiments. Near ballistic transport (similar to 80% of the ballistic limit) is demonstrated experimentally for transistors with a channel length of similar to 60 nm, owing to the long mean free path of electrons in InAs NWs.
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