Journal
NANO LETTERS
Volume 13, Issue 9, Pages 4212-4216Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl401916s
Keywords
Molybdenum disulfide (MoS2); transition metal dichalcogenides (TMD); two-dimensional (2D) electronics; layered semiconductor; contact; mobility
Categories
Funding
- ONR GATE MUIU
- Packard Fellowship
- NSF [DMR-0819762, ECS-0335765]
- Harvard's CNS
Ask authors/readers for more resources
We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS2. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS2 down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal-insulator transition in both monolayer and bilayer samples. In the metallic regime, the high-temperature behavior of the mobility showed strong temperature dependence consistent with phonon-dominated transport. At low temperature, intrinsic field-effect mobilities approaching 1000 cm(2)/(V.s) were observed for both monolayer and bilayer devices. Mobilities extracted from Hall effect measurements were several times lower and showed a strong dependence on density, likely caused by screening of charged impurity scattering at higher densities.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available