Journal
NANO LETTERS
Volume 13, Issue 9, Pages 4317-4325Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4021045
Keywords
LED; atom probe tomography; semiconductor; nanowire; GaN; quantum well
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Funding
- Energy Frontier Research Center on Solid State Lighting Science
- U.S. DOE Office of Basic Energy Sciences
- National Defensive Science and Engineering Graduate Fellowship program
- NSF-MRI [DMR-0420532]
- ONR-DURIP [N00014-0400798, N00014-0610539, N00014-0910781]
- Initiative for Sustainability and Energy at Northwestern (ISEN)
- National Science Foundation's MRSEC program [DMR-1121262]
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
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Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.
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